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| Ordering number:ENN2048B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1168/2SD1725 Large Current Switching Applications Features * Relay drivers, high-speed inverters, converters. Package Dimensions unit:mm 2043B [2SB1168/2SD1725] 8.0 4.0 2.0 2.7 Features * Low collector-to-emitter saturation voltage. * High fT. * Excellent linearity of hFE. * Short switching time. 1.6 0.8 1.5 0.6 15.5 0.8 3.0 9.0 11.0 0.5 1 2 3 ( ) : 2SB1168 Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 4.8 1.2 Specifications 2.4 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126LP Ratings (-)120 (-)100 (-)6 (-)4 (-)8 1.2 Unit V V V A A W W Tc=25C 20 150 -55 to +150 C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE1 hFE2 fT VCB=(-)100V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)0.5A VCE=(-)5V, IC=(-)3A VCE=(-)10V, IC=(-)0.5A 70* 40 (130) 180 MHz MHz Conditions Ratings min typ max (-)1 (-)1 400* Unit A A * : The 2SB1168/2SD1725 are classified by 0.5A hFE as follows : Rank hFE 70 Q to 140 100 R to 200 140 S to 280 200 T to 400 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20701TS TA-3150, 3153/92098HA (KT)/4137KI/D176TA, TS No.2048-1/5 2SB1168/2SD1725 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) Conditions VCB=(-)10V, f=1MHz IC=(-)2A, IB=(-)0.2A IC=(-)2A, IB=(-)0.2A (-)120 (-)100 (-)6 (100) 100 See specified Test Circuit 900 (800) 50(50) Ratings min typ 40(65) (-200) 150 (-)0.9 (-500) 400 (-)1.2 max Unit pF mV mV V V V V ns ns ns ns ns V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO ton tstg tf IE=(-)10A, IC=0 Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 + 100F VBE= --5V + 470F VCC=50V RB RL IC=10IB1= --10IB2=2A For PNP, the polarity is reversed. --5 IC -- VCE 2SB1168 From top --100mA --90mA --80mA --70mA --60mA --50mA 5 IC -- VCE 2SD1725 From top 60mA 50mA 40mA 90mA 80mA 70mA 100m A Collector Current, IC - A Collector Current, IC - A --4 --40m --30mA --20mA A 4 --3 3 A 30m A 20m --2 2 10mA 5mA --10mA --1 --5mA --2mA IB=0 0 --1 --2 --3 --4 --5 ITR09128 1 2mA 0 0 1 2 0 IB=0 3 4 5 ITR09129 Collector-to-Emitter Voltage, VCE - V --2.0 Collector-to-Emitter Voltage, VCE - V 2.0 IC -- VCE 2SB1168 A --10m A 9m ---8mA --7mA --6mA --5mA --4mA --3mA IC -- VCE 8mA 2SD1725 Collector Current, IC - A Collector Current, IC - A --1.6 1.6 7mA 6mA --1.2 1.2 5mA 4mA --0.8 0.8 3mA --0.4 --2mA --1mA 2mA 0.4 1mA 0 --30 --40 --50 ITR09130 0 10 20 0 0 --10 --20 IB=0 Collector-to-Emitter Voltage, VCE - V IB=0 30 40 50 ITR09131 Collector-to-Emitter Voltage, VCE - V No.2048-2/5 2SB1168/2SD1725 --5 IC -- VBE 2SB1168 VCE= --5V 5 IC -- VBE 2SD1725 VCE=5V Collector Current, IC - A --3 Collector Current, IC - A --4 4 3 --2 2 --1 Ta=7 5 25C C --25 C 1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 ITR09132 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ITR09133 Base-to-Emitter Voltage, VBE - V 1000 7 5 3 Base-to-Emitter Voltage, VBE - V 1000 7 5 3 hFE -- IC 2SB1168 VCE= --5V Ta=75C 25C --25C hFE -- IC 2SD1725 VCE=5V DC Current Gain, hFE 2 100 7 5 3 2 10 7 5 5 --0.01 2 3 5 --0.1 DC Current Gain, hFE 2 100 7 5 3 2 10 7 5 Ta=75C 25C --25C 2 3 5 --1.0 2 3 Collector Current, IC - A 5 5 --10 ITR09134 3 2 5 0.01 2 3 5 0.1 2 Ta=7 5C 25C --25C 3 5 2 1.0 3 Collector Current, IC - A 5 10 ITR09135 f T -- IC 2SB1168 / 2SD1725 VCE=10V Cob -- VCB 2SB1168 / 2SD1725 f=1MHz Gain-Bandwidth Product, fT - MHz 2 2SD1725 Output Capacitance, Cob - pF 3 100 7 5 3 2 100 7 5 3 2 2SB1 168 2SB 116 8 2SD 172 5 10 7 5 10 2 3 5 7 0.1 (For PNP, minus sign is omitted.) 2 3 5 7 1.0 2 3 5 (For PNP, minus sign is omitted.) 5 7 1.0 2 3 5 7 Collector Current, IC - A 5 ITR09136 5 Collector-to-Base Voltage, VCB -- V 10 2 3 5 7 100 2 ITR09137 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 2SB1168 IC / IB=10 VCE(sat) -- IC 2SD1725 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 3 2 3 2 --1000 5 3 2 --100 5 3 2 --10 5 --0.01 2 3 5 1000 7 5 3 2 100 7 5 3 2 10 25 Ta= 75C --25 --0.1 C C 25 C Ta=75C 5C --2 0.1 2 3 5 1.0 2 3 5 10 ITR09139 2 3 5 Collector Current, IC - A --1.0 2 3 5 --10 ITR09138 5 0.01 2 3 5 Collector Current, IC - A No.2048-3/5 2SB1168/2SD1725 --10 7 VBE(sat) -- IC 2SB1168 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE (sat) - V 10 7 5 3 2 VBE(sat) -- IC 2SD1725 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE (sat) - V 5 3 2 --1.0 7 5 3 2 5 --0.01 2 Ta= --25C 25C 1.0 7 5 3 2 5 25C Ta= --25C 75C 75C 3 5 --0.1 2 3 5 --1.0 2 3 Collector Current, IC - A 2 10 5 --10 ITR09140 1.4 5 0.01 2 3 5 0.1 2 3 5 1.0 2 3 Collector Current, IC - A 5 10 ITR09141 ASO ICP=8A IC=4A 10 PC -- Ta 2SB1168 / 2SD1725 3 2 1.0 5 3 2 0.1 5 3 2 0.01 5 2 Collector Dissipation, PC - W 2SB1168 / 2SD1725 Tc=25C Single pulse c ms nT 10 s tio 0m era op 1.2 Collector Current, IC - A 1.0 1m DC s DC op era 0.8 No he tio at nT a= sin 25 0.6 k =2 5 C C 0.4 0.2 0 (For PNP, minus sign is omitted). 3 5 Collector-to-Emitter Voltage, VCE - V 24 1.0 2 3 5 10 2 3 5 2 100 ITR09142 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - C ITR09094 PC -- Tc 2SB1168 / 2SD1725 20 Collector Dissipation, PC - W 16 12 8 4 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc - C ITR09095 No.2048-4/5 2SB1168/2SD1725 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice. PS No.2048-5/5 |
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